IndiumV3, Russie, Analysis, bibRecord, 000345

Resonant Raman spectroscopy on InN

Identifieur interne : 000345 ( Russie/Analysis ); précédent : 000344; suivant : 000346

Resonant Raman spectroscopy on InN

Auteurs : RBID : Pascal:05-0208980

Descripteurs français

Pascal (Inist)
- Diffusion Raman résonance, Spectre Raman, Bande interdite, Epitaxie jet moléculaire, Défaut, Impureté, Point critique, Structure bande, Effet température, Phonon, Analyse donnée, Durée vie, Indium nitrure, Semiconducteur, Composé minéral, In N, InN, 78.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Band structure, Critical points, Data analysis, Defects, Energy gap, Impurities, Indium nitrides, Inorganic compounds, Lifetime, Molecular beam epitaxy, Phonons, Raman spectra, Resonance Raman scattering, Semiconductor materials, Temperature effects.

Abstract

The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBE-grown films. This technique can distinguish between electronic transitions related to the InN from transitions related to defects and impurities that are so typical for current InN material. Using excitation energies from 1.49 eV (830 nm) to 2.54 eV (488 nm), we identify a critical point in the InN band structure within 200-300 meV below 1.5 eV. The origin of this critical point, whether band gap or higher critical point, is discussed. Furthermore, Raman results are presented on the temperature dependence of the InN phonons. Analysis of the data provides information on phonon lifetimes and decay mechanisms, important to assess whether hot phonon effects need to be considered in future InN devices.

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Pascal:05-0208980

Le document en format XML

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<author><name sortKey="Kuball, M" uniqKey="Kuball M">M. Kuball</name>
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<wicri:noRegion>Bristol BS8 1TL</wicri:noRegion>
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<author><name sortKey="Pomeroy, J W" uniqKey="Pomeroy J">J. W. Pomeroy</name>
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<author><name sortKey="Wintrebert Fouquet, M" uniqKey="Wintrebert Fouquet M">M. Wintrebert-Fouquet</name>
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<author><name sortKey="Butcher, K S A" uniqKey="Butcher K">K. S. A. Butcher</name>
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<author><name>HAI LU</name>
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<author><name sortKey="Schaff, W J" uniqKey="Schaff W">W. J. Schaff</name>
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<author><name sortKey="Leymarie, J" uniqKey="Leymarie J">J. Leymarie</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term>
<term>Critical points</term>
<term>Data analysis</term>
<term>Defects</term>
<term>Energy gap</term>
<term>Impurities</term>
<term>Indium nitrides</term>
<term>Inorganic compounds</term>
<term>Lifetime</term>
<term>Molecular beam epitaxy</term>
<term>Phonons</term>
<term>Raman spectra</term>
<term>Resonance Raman scattering</term>
<term>Semiconductor materials</term>
<term>Temperature effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diffusion Raman résonance</term>
<term>Spectre Raman</term>
<term>Bande interdite</term>
<term>Epitaxie jet moléculaire</term>
<term>Défaut</term>
<term>Impureté</term>
<term>Point critique</term>
<term>Structure bande</term>
<term>Effet température</term>
<term>Phonon</term>
<term>Analyse donnée</term>
<term>Durée vie</term>
<term>Indium nitrure</term>
<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>In N</term>
<term>InN</term>
<term>78</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBE-grown films. This technique can distinguish between electronic transitions related to the InN from transitions related to defects and impurities that are so typical for current InN material. Using excitation energies from 1.49 eV (830 nm) to 2.54 eV (488 nm), we identify a critical point in the InN band structure within 200-300 meV below 1.5 eV. The origin of this critical point, whether band gap or higher critical point, is discussed. Furthermore, Raman results are presented on the temperature dependence of the InN phonons. Analysis of the data provides information on phonon lifetimes and decay mechanisms, important to assess whether hot phonon effects need to be considered in future InN devices.</div>
</front>
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<fA11 i1="07" i2="1"><s1>SHUBINA (T. V.)</s1>
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<fA11 i1="08" i2="1"><s1>IVANOV (S. V.)</s1>
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<fC01 i1="01" l="ENG"><s0>The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBE-grown films. This technique can distinguish between electronic transitions related to the InN from transitions related to defects and impurities that are so typical for current InN material. Using excitation energies from 1.49 eV (830 nm) to 2.54 eV (488 nm), we identify a critical point in the InN band structure within 200-300 meV below 1.5 eV. The origin of this critical point, whether band gap or higher critical point, is discussed. Furthermore, Raman results are presented on the temperature dependence of the InN phonons. Analysis of the data provides information on phonon lifetimes and decay mechanisms, important to assess whether hot phonon effects need to be considered in future InN devices.</s0>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>Internatyional Workshop on Nitride Semiconductors (IWN 2004)</s1>
<s3>Pittsburgh, Pennsylvania USA</s3>
<s4>2004-07-19</s4>
</fA30>
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</standard>
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Resonant Raman spectroscopy on InN

Resonant Raman spectroscopy on InN

Descripteurs français

English descriptors

Abstract

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